ROHM announces the cutting-edge 4^th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment.

ROHM’s new 4^th Generation SiC MOSFETs are capable of delivering low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications, including automotive traction inverters and switching power supplies. Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future.

ROHM is committed to continue to expand its SiC power device lineup while combining modularization technologies with peripheral devices such as control ICs designed to maximize performance in order contribute to technical innovation in next-generation vehicles. At the same time, ROHM will provide solutions that resolve customer issues – including web-based simulation tools that reduce application development man-hours and help prevent evaluation problems.

Key Features

1) Improved trench structure delivers the industry’s lowest ON resistance

2) Achieves lower switching loss by significantly reducing parasitic capacitance